diode rapidswitchingemittercontrolleddiode IDW15E65D2 emittercontrolleddiode datasheet industrialpowercontrol
2 IDW15E65D2 emittercontrolleddiode rev.2.2,2014-08-26 rapidswitchingemittercontrolleddiode features: ?qualifiedaccordingtojedecfortargetapplications ?650vemittercontrolledtechnology ?fastrecovery ?softswitching ?lowreverserecoverycharge ?lowforwardvoltageandstableovertemperature ?175cjunctionoperatingtemperature ?easyparalleling ?pb-freeleadplating;rohscompliant applications: ?boostdiodeinccmpfc packagepindefinition: ?pin1-notconnected ?pin2-cathode ?pin3-anode keyperformanceandpackageparameters type v rrm i f v f , t vj =25c t vjmax marking package IDW15E65D2 650v 15a 1.6v 175c e15ed2 pg-to247-3 a c 1 2 3
3 IDW15E65D2 emittercontrolleddiode rev.2.2,2014-08-26 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 a c 1 2 3
4 IDW15E65D2 emittercontrolleddiode rev.2.2,2014-08-26 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit repetitive peak reverse voltage v rrm 650 v diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 30.0 15.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 45.0 a diode surge non repetitive forward current t c =25c, t p =8.3ms,sinehalfwave i fsm 100.0 a powerdissipation t c =25c p tot 85.7 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic diode thermal resistance, 1) junction - case r th(j-c) 1.75 k/w thermal resistance junction - ambient r th(j-a) 40 k/w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic diode forward voltage v f i f =15.0a t vj =25c t vj =175c - - 1.60 1.65 2.20 - v reverse leakage current i r v r =650v t vj =25c t vj =175c - - - - 40.0 4000.0 a electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh 1) please be aware that in non standard load conditions, due to high rth(j-c), tvj close to tvjmax can be reached. a c 1 2 3
5 IDW15E65D2 emittercontrolleddiode rev.2.2,2014-08-26 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 30 - ns diode reverse recovery charge q rr - 0.20 - c diode peak reverse recovery current i rrm - 12.8 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -6500 - a/s t vj =25c, v r =400v, i f =15.0a, di f /dt =1000a/s, l s =35nh, c s =32pf, switch ipw60r045cp diode reverse recovery time t rr - 47 - ns diode reverse recovery charge q rr - 0.12 - c diode peak reverse recovery current i rrm - 3.3 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1500 - a/s t vj =25c, v r =400v, i f =15.0a, di f /dt =200a/s, l s =35nh, c s =32pf, switch ipw60r045cp switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit diodecharacteristic,at t vj =175c/125c diode reverse recovery time t rr - 30 - ns diode reverse recovery charge q rr - 0.37 - c diode peak reverse recovery current i rrm - 16.9 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -6800 - a/s t vj =175c, v r =400v, i f =15.0a, di f /dt =1000a/s, l s =35nh, c s =32pf, switch ipw60r045cp diode reverse recovery time t rr - 51 - ns diode reverse recovery charge q rr - 0.21 - c diode peak reverse recovery current i rrm - 5.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1900 - a/s t vj =125c, v r =400v, i f =15.0a, di f /dt =200a/s, l s =35nh, c s =32pf, switch ipw60r045cp a c 1 2 3
6 IDW15E65D2 emittercontrolleddiode rev.2.2,2014-08-26 figure 1. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 figure 2. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.0442 1.4e-5 2 0.44187 2.4e-4 3 0.61958 1.8e-3 4 0.55185 7.8e-3 5 0.076024 0.1290993 6 3.1e-3 2.085894 figure 3. typicalreverserecoverytimeasafunctionof diodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 0 1000 2000 3000 4000 5000 6000 0 10 20 30 40 50 60 70 80 t j =25c, i f = 15a t j =175c, i f = 15a figure 4. typicalreverserecoverychargeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 0 1000 2000 3000 4000 5000 6000 0.0 0.1 0.2 0.3 0.4 0.5 t j =25c, i f = 15a t j =175c, i f = 15a a c 1 2 3
7 IDW15E65D2 emittercontrolleddiode rev.2.2,2014-08-26 figure 5. typicalpeakreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rrm ,reverserecoverycurrent[a] 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 35 40 t j =25c, i f = 15a t j =175c, i f = 15a figure 6. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 0 1000 2000 3000 4000 5000 6000 -14000 -12000 -10000 -8000 -6000 -4000 -2000 0 t j =25c, i f = 15a t j =175c, i f = 15a figure 7. typicaldiodeforwardcurrentasafunctionof forwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 35 40 45 t j =25c t j =175c figure 8. typicaldiodeforwardvoltageasafunctionof junctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i f =7,5a i f =15a i f =30a a c 1 2 3
8 IDW15E65D2 emittercontrolleddiode rev.2.2,2014-08-26 a c 1 2 3 pg-to247-3
9 IDW15E65D2 emittercontrolleddiode rev.2.2,2014-08-26 a c 1 2 3 pg-to247-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc
10 IDW15E65D2 emitter controlled diode rev. 2.2, 2014-08-26 revision history IDW15E65D2 previous revision revision date subjects (major changes since last revision) 1.1 2013-03-13 preliminary data sheet 2.1 2013-12-16 final ds / new marking pattern 2.2 2014-08-26 vfmax limit reduced according be test and qrr at 25c corrected a c 1 2 3 pg-to247-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc
|
